| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,250 pcs
|
4250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP2NK90Z from STMicroelectronics, is designed for high voltage applications with a maximum drain-source voltage (Vds) of 900V. It can handle a continuous drain current of 2.1A at case temperature and has a maximum power dissipation of 70W.
The MOSFET features a low on-resistance of 6.5 Ohms at 1.05A and 10V gate-source voltage. The gate charge (Qg) is 27nC at 10V, and the input capacitance (Ciss) is 485pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 50µA, with a maximum gate-source voltage of ±30V.
Packaged in a TO-220-3 configuration, this component is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
TO-220-3 (through-hole).
-55°C to 150°C (junction temperature).
2.1A at case temperature.
70W at case temperature.
6.5Ohm at 1.05A and 10V gate drive.
27nC at 10V gate drive.