| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP2N95K5 is a high-voltage N-Channel MOSFET designed for various power switching applications. It features a maximum drain-source voltage (Vdss) of 950V and a continuous drain current of 2A at a case temperature of 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 5 Ohm at 1A and 10V, an input capacitance (Ciss) of 105 pF at 100V, and a gate charge (Qg) of 10 nC at 10V. The gate threshold voltage (Vgs(th)) is 5V at 100µA, with a maximum gate-source voltage (Vgs Max) of 30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 45W (Tc). It is housed in a TO-220 package and features a through-hole mounting type, making it suitable for applications requiring robust power handling and thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
950V maximum.
TO-220-3 (through-hole).
-55°C to 150°C (junction).
2A at case temperature.
5 Ohm maximum at 1A, 10V.
10 nC maximum at 10V.
45W at case temperature.