STP28N65M2 The STP28N65M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a 20A continuous drain current.
Mfr Part #:

STP28N65M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP28N65M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a 20A continuous drain current.
✓ Total Stock: 2,400 pcs
$ Price Range: $2.56

STP28N65M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,800 pcs
1800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
600 pcs
600 pcs On Request 1 On Request On Request 18+ On Request On Request

STP28N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP28N65M2 Description

Short technical summary and product information.

The STP28N65M2 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, featuring a robust 650V drain-to-source voltage rating and a continuous drain current capability of 20A. Its MOSFET technology ensures efficient operation.

 

The device is housed in a standard TO-220 package, suitable for through-hole mounting. Key electrical characteristics include a maximum on-resistance of 180mOhm at 10A and 10V, an input capacitance of 1440pF, and a gate charge of 35nC. The operating temperature range extends up to 150°C (TJ), making it suitable for demanding environments. The maximum power dissipation is rated at 170W (Tc).

 

With a gate drive voltage requirement of 10V and a threshold voltage of 4V, the STP28N65M2 is designed for compatibility with common gate drive circuits. The ±25V maximum gate-source voltage provides a good safety margin. Its RoHS3 compliance indicates adherence to environmental standards.

STP28N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STP28N65M2 N-Channel MOSFET
Subcategory: N-Channel

STP28N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP28N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP28N65M2 Features

  • 650V drain-source voltage rating.
  • 20A continuous drain current.
  • Low on-resistance of 180mOhm.
  • TO-220 package for through-hole mounting.
  • Operates up to 150°C.

STP28N65M2 Applications

  • Power supply applications.
  • Switching power supplies.
  • Motor control circuits.
  • General purpose power switching.

STP28N65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of STP28N65M2?

650V.

What is the maximum continuous drain current?

20A at case temperature (Tc).

What is the on-resistance of STP28N65M2?

180mOhm maximum at 10A drain current and 10V gate voltage.

What is the gate charge of STP28N65M2?

35nC maximum at 10V gate voltage.

What is the maximum junction temperature?

150°C.

What package is the STP28N65M2 available in?

TO-220-3 (through-hole).

What is the threshold voltage of STP28N65M2?

4V maximum at 250µA drain current.

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