STP26NM60N The STP26NM60N is an N-Channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 20A continuous current. It comes in a TO-220 package.
Mfr Part #:

STP26NM60N

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP26NM60N is an N-Channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 20A continuous current. It comes in a TO-220 package.
✓ Total Stock: 36,273 pcs
$ Price Range: $2.56

STP26NM60N Available from 5 distributors

✓ Authorised
✓ Non-Authorised

STP26NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP26NM60N Description

Short technical summary and product information.

The STP26NM60N is a high-quality N-Channel MOSFET manufactured by STMicroelectronics. It is designed for high-speed and low-voltage operations, offering excellent performance for applications requiring analog and digital signal switching.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a continuous drain current of 20A at 25°C (Tc), and a maximum on-resistance (Rds On) of 165mOhm at 10A, 10V. The gate charge (Qg) is 60nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is housed in a standard TO-220-3 package, suitable for through-hole mounting. Its power dissipation is rated at a maximum of 140W (Tc).

 

The STP26NM60N is optimized for applications demanding efficient switching and robust performance.

STP26NM60N Quick Information

Product Type: MOSFET
Series: STP26NM60N
Canonical Name: STP26NM60N N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STP26NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP26NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP26NM60N Features

  • 600V drain-to-source voltage rating.
  • 20A continuous drain current.
  • Low 165mOhm maximum on-resistance.
  • TO-220 package for through-hole mounting.
  • Optimized for high-speed switching.

STP26NM60N Applications

  • Ideal for analog signal switching.
  • Suitable for digital signal switching.
  • Used in power supply circuits.
  • Applicable in motor control systems.

STP26NM60N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STP26NM60N?

600V

What is the package type for this MOSFET?

TO-220-3 through-hole package

What is the maximum operating junction temperature?

150°C

What is the gate threshold voltage?

4V at 250µA drain current

What is the on-resistance of the STP26NM60N?

165mOhm at 10A, 10V

What is the continuous drain current rating?

20A at case temperature 25°C

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