| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The STP26N60M2 is a single N-Channel MOSFET manufactured by STMicroelectronics. It features a high drain-to-source voltage rating of 600V and a continuous drain current capability of 20A (Tc). The MOSFET operates with a gate-source voltage of up to ±25V and requires a 10V gate drive voltage for optimal performance.
With a maximum power dissipation of 169W (Tc), this device is suitable for various power switching applications. The technology employed is MOSFET (Metal Oxide), providing efficient switching characteristics. The component is designed for through-hole mounting and comes in a standard TO-220-3 package.
This MOSFET is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances. The Moisture Sensitivity Level (MSL) is rated at 1 (Unlimited), and the REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 600V.
The continuous drain current is 20A at case temperature Tc.
The maximum power dissipation is 169W at case temperature Tc.
The recommended gate drive voltage is 10V.
The maximum gate-source voltage is ±25V.
The device is available in a TO-220-3 package with through-hole mounting.
It is an N-Channel MOSFET.