STP25NM60N The STP25NM60N is an N-channel MOSFET from STMicroelectronics designed for power switching applications. It offers a 600V drain-source voltage and a continuous drain current of 21A.
Mfr Part #:

STP25NM60N

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP25NM60N is an N-channel MOSFET from STMicroelectronics designed for power switching applications. It offers a 600V drain-source voltage and a continuous drain current of 21A.
✓ Total Stock: 3,456 pcs
$ Price Range: $2.56

STP25NM60N Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,350 pcs
1350 pcs On Request 1 On Request On Request 1134 On Request On Request
Non-Authorised Inventory information
106 pcs
106 pcs On Request 1 On Request On Request 10+ On Request On Request

STP25NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP25NM60N Description

Short technical summary and product information.

The STP25NM60N is a high-performance N-channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications and features a maximum drain-source voltage (Vdss) of 600V.

 

Key electrical characteristics include a continuous drain current (Id) of 21A (Tc) and a maximum on-resistance (Rds On) of 160mOhm at 10.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-to-source voltage is ±25V. Input capacitance (Ciss) is rated at 2400 pF at 50V.

 

With a maximum power dissipation of 160W (Tc) and an operating junction temperature of up to 150°C, the STP25NM60N is suitable for demanding applications. It utilizes MOSFET (Metal Oxide) technology and is configured as an N-Channel FET.

 

The component is packaged in a TO-220-3 case and features a through-hole mounting type. Its RoHS status is compliant, and it has an MSL rating of 1.

STP25NM60N Quick Information

Product Type: MOSFET
Canonical Name: STP25NM60N N-Channel MOSFET
Subcategory: Single

STP25NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP25NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP25NM60N Features

  • 600V drain-source voltage rating.
  • 21A continuous drain current capability.
  • 160mOhm maximum on-resistance.
  • TO-220 package with through-hole mounting.
  • RoHS3 compliant.

STP25NM60N Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Applicable for motor control.
  • Ideal for general purpose power applications.

STP25NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP25NM60N?

600V.

What is the continuous drain current rating?

21A at case temperature.

What is the on-resistance of this MOSFET?

160mOhm maximum at 10.5A drain current and 10V gate drive.

What is the gate charge of the STP25NM60N?

84nC maximum at 10V gate voltage.

What is the input capacitance?

2400pF maximum at 50V drain-source voltage.

What package does the STP25NM60N come in?

TO-220-3 (through-hole).

What is the maximum operating junction temperature?

150°C.

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