| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | 1134 | On Request | On Request | |
|
106 pcs
|
106 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP25NM60N is a high-performance N-channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications and features a maximum drain-source voltage (Vdss) of 600V.
Key electrical characteristics include a continuous drain current (Id) of 21A (Tc) and a maximum on-resistance (Rds On) of 160mOhm at 10.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-to-source voltage is ±25V. Input capacitance (Ciss) is rated at 2400 pF at 50V.
With a maximum power dissipation of 160W (Tc) and an operating junction temperature of up to 150°C, the STP25NM60N is suitable for demanding applications. It utilizes MOSFET (Metal Oxide) technology and is configured as an N-Channel FET.
The component is packaged in a TO-220-3 case and features a through-hole mounting type. Its RoHS status is compliant, and it has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
21A at case temperature.
160mOhm maximum at 10.5A drain current and 10V gate drive.
84nC maximum at 10V gate voltage.
2400pF maximum at 50V drain-source voltage.
TO-220-3 (through-hole).
150°C.