STP25N60M2-EP The STP25N60M2-EP is an N-channel Power MOSFET from STMicroelectronics, designed for switching applications. It features a 600V drain-source voltage and 18A continuous current capability.
Mfr Part #:

STP25N60M2-EP

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP25N60M2-EP is an N-channel Power MOSFET from STMicroelectronics, designed for switching applications. It features a 600V drain-source voltage and 18A continuous current capability.
✓ Total Stock: 7,020 pcs
$ Price Range: $2.56

STP25N60M2-EP Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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STP25N60M2-EP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP25N60M2-EP Description

Short technical summary and product information.

The STP25N60M2-EP is an N-channel Power MOSFET developed using STMicroelectronics' MDmesh™ M2 EP enhanced performance technology. This device is suitable for demanding very high frequency converters, operating at frequencies greater than 150 kHz.

 

Key electrical characteristics include a maximum drain-source voltage of 600 V and a continuous drain current of 18 A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 188 mΩ at 9 A and 10 Vgs. It also features a gate charge of 29 nC and an input capacitance of 1090 pF.

 

This MOSFET is housed in a TO-220 package with a through-hole mounting type. It operates within a temperature range of -55°C to 150°C (TJ). The device is 100% avalanche tested and Zener-protected, offering robust performance for switching applications.

 

Applications include general switching applications and tailored use in very high frequency converters. Its optimized switching characteristics with very low turn-off switching losses make it ideal for demanding power supply designs.

STP25N60M2-EP Quick Information

Product Type: Power MOSFET
Series: MDmesh™ M2 EP
Canonical Name: STP25N60M2-EP N-channel 600 V Power MOSFET
Subcategory: N-Channel

STP25N60M2-EP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP25N60M2-EP Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP25N60M2-EP Features

  • 600V drain-source voltage rating.
  • 18A continuous drain current.
  • 188mΩ maximum on-resistance.
  • Low turn-off switching losses.
  • TO-220 package for through-hole mounting.

STP25N60M2-EP Applications

  • Switching power supplies and converters.
  • Motor control and drive circuits.
  • Power factor correction stages.
  • High-voltage DC-DC converters.
  • Industrial power management systems.

STP25N60M2-EP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP25N60M2-EP?

The maximum drain-source voltage is 650V at maximum junction temperature, with a nominal rating of 600V.

What is the continuous drain current rating?

The continuous drain current is 18A at a case temperature of 25°C, derating to 11.3A at 100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 188 mΩ at 9A drain current and 10V gate-source voltage, with a typical value of 175 mΩ.

What package does the STP25N60M2-EP come in?

It comes in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate charge of this device?

The maximum gate charge is 29 nC at 10V gate-source voltage.

What is the power dissipation capability?

The maximum power dissipation is 150W at a case temperature of 25°C.

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