| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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163 pcs
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163 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The STMicroelectronics STP24NM60N is an N-Channel MOSFET designed for power applications. It features a high drain-source breakdown voltage of 600V and a continuous drain current capability of 17A.
The MOSFET offers a maximum on-resistance of 190mOhm at 8A and 10V, with a gate charge of 46nC at 10V. The gate-source threshold voltage is 4V at 250µA, and the maximum gate-source voltage is ±30V.
With a power dissipation rating of 125W (Tc), this device is suitable for various power switching applications. It operates within a temperature range of -55°C to 150°C (TJ).
The STP24NM60N is packaged in a TO-220 case and is designed for through-hole mounting. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The continuous drain current is 17A.
The maximum on-resistance is 190mOhm at 8A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The STP24NM60N is supplied in a TO-220 package.
The STP24NM60N is mounted using the through-hole method.