| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,150 pcs
|
30150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
403 pcs
|
403 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP24NF10 is a single N-Channel MOSFET manufactured by STMicroelectronics. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 26A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 60mOhm at 12A and 10V gate-source voltage, and a gate charge (Qg) of 41nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 85W (Tc). It features through-hole mounting and comes in a TO-220-3 package.
The STP24NF10 utilizes MOSFET (Metal Oxide) technology and is suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3.
-55°C to 175°C (junction).
26A at case temperature.
60mOhm maximum at 12A and 10V gate drive.
4V maximum at 250µA drain current.