| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP23NM50N is a power MOSFET manufactured by STMicroelectronics. This N-channel device offers a high drain-source voltage rating of 500V and a continuous drain current capability of 17A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance of 190mOhm at 8.5A and 10V gate-source voltage. The gate charge is rated at 45nC maximum at 10V, with a gate threshold voltage of 4V maximum at 250µA. The maximum gate-source voltage is ±25V, and the recommended gate drive voltage is 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 125W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STP23NM50N is packaged in a TO-220-3 case and features through-hole mounting. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
17A at case temperature Tc.
190mOhm maximum at 8.5A drain current and 10V gate drive.
45nC maximum at 10V gate-source voltage.
1330pF maximum at 50V drain-source voltage.
150°C.
TO-220-3 through-hole package.