| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,850 pcs
|
3850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP23N80K5 is a high-voltage N-Channel Power MOSFET manufactured by STMicroelectronics. It is designed for demanding high-power applications, offering robust performance with an 800V drain-to-source voltage rating and a continuous drain current of 16A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 280mOhm at 8A and 10V gate-source voltage, and a gate charge of 33nC. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is housed in a standard TO-220-3 package, suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, making it a reliable choice for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 800 V.
The continuous drain current is 16 A.
The maximum on-resistance (Rds On) is 280 mOhm at 8A and 10V.
The operating temperature range is -55°C to 150°C.
The STP23N80K5 is in a TO-220-3 package.
The STP23N80K5 is mounted using the through-hole method.