| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,034 pcs
|
20034 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,131 pcs
|
1131 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP22NM60N is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for demanding power applications, featuring a robust 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 220mOhm at 8A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 100µA, and a gate-to-source voltage range of ±30V. The input capacitance (Ciss) is rated at 1300pF at 50V, and the gate charge (Qg) is 44nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 125W (Tc). It is housed in a standard TO-220-3 package, suitable for through-hole mounting.
The STP22NM60N utilizes Metal Oxide Semiconductor technology, making it suitable for various power control and switching circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
16A at case temperature.
220mOhm maximum at 8A drain current and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package.
44nC at 10V gate-source voltage.
1300pF at 50V drain-source voltage.