| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,600 pcs
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11600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The STMicroelectronics STP220N6F7 is a high-performance N-channel MOSFET designed for demanding power switching applications. It features a robust construction with a 60V drain-to-source voltage rating and a significant continuous drain current capability of 120A at the case temperature.
This MOSFET utilizes advanced technology to achieve a low on-resistance of just 2mOhm at 60A and 10V gate drive, minimizing conduction losses and improving efficiency. The input capacitance (Ciss) is rated at 6400 pF at 25V, and the gate charge (Qg) is a maximum of 100 nC at 10V, ensuring efficient switching characteristics.
Packaged in the industry-standard TO-220 package, the STP220N6F7 is designed for through-hole mounting, making it suitable for various power supply designs, motor control circuits, and other high-power applications. Its operating temperature range of -55°C to 175°C (TJ) provides reliability in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The STP220N6F7 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The continuous drain current is 120 A at a case temperature (Tc).
The maximum on-state resistance is 2 mOhm at a drain current of 60 A and a gate-source voltage of 10 V.
The gate charge is 100 nC at a gate-source voltage of 10 V.
The gate-source voltage limit is ±20 V.