| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,149 pcs
|
1149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP21N65M5 is a single N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, featuring a high drain-source voltage rating of 650V and a continuous drain current of 17A at a case temperature of Tc.
This MOSFET utilizes Metal Oxide Semiconductor technology. Key electrical characteristics include a maximum on-resistance of 190mOhm at 8.5A and 10V, a gate threshold voltage of 5V at 250µA, and a maximum gate-source voltage of ±25V. The input capacitance (Ciss) is rated at 1950pF at 100V, and the gate charge (Qg) is 50nC at 10V.
With a maximum power dissipation of 125W (Tc) and an operating junction temperature of up to 150°C, the STP21N65M5 is suitable for demanding applications. It is mounted via a through-hole method in a TO-220-3 package, with the supplier package identified as TO-220.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 17A at the case temperature.
The maximum on-resistance (Rds On) is 190mOhm when measured at 8.5A and 10V gate-source voltage.
The operating junction temperature (TJ) is up to 150°C.
This MOSFET is mounted using the through-hole method.
The component is supplied in a TO-220-3 package.