| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
897 pcs
|
897 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1519+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP20NM50 is a single N-Channel MOSFET belonging to the Metal Oxide semiconductor family. It is designed for applications requiring high voltage switching capabilities, featuring a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 20A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 250mOhm at 10A and 10V gate drive, an input capacitance (Ciss) of 1480pF at 25V, and a gate charge (Qg) of 56nC at 10V. The device operates within a temperature range of -65°C to 150°C (TJ).
Packaged in a TO-220-3 configuration, the STP20NM50 is suitable for through-hole mounting. Its robust design and specifications make it a reliable choice for various power switching and control circuits where high voltage and current handling are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The continuous drain current (Id) is 20A at 25°C case temperature.
The maximum on-resistance (Rds on) is 250mOhm at 10A drain current and 10V gate drive.
The STP20NM50 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at 250µA drain current.
The maximum power dissipation is 192W at case temperature.