| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 1998 | On Request | On Request |
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| Manufacturer Name |
The STP20NE06 is an N-Channel STripFET Power MOSFET designed for applications requiring high current handling and low on-resistance. It offers a continuous drain current of 20A at 25°C and 13A at 100°C, with a maximum drain-source voltage of 60V.
Key electrical characteristics include a typical on-resistance of 0.07 Ohms at 10A and a gate threshold voltage of 2V. The device is rated for a maximum junction temperature of 175°C and features avalanche rugged technology, with 100% avalanche testing.
Available in TO-220 and TO-220FP packages, this MOSFET is suitable for DC motor control, DC-DC converters, and synchronous rectification applications. Its high dV/dt capability and application-oriented characterization make it a robust choice for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 60V at VGS=0.
The STP20NE06 is available in TO-220 and TO-220FP through-hole packages.
The maximum operating junction temperature is 175°C, and the storage temperature range is -65°C to 175°C.
The continuous drain current is 20A at 25°C case temperature and 13A at 100°C.
The typical on-resistance is 0.07Ω and maximum is 0.085Ω at VGS=10V, ID=10A.
The typical gate threshold voltage is 2V at VDS=VGS, ID=250μA.
The single pulse avalanche energy is 80mJ at starting Tj=25°C.