| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STP20N90K5 is a high-voltage N-channel Power MOSFET utilizing MDmesh™ K5 technology. This innovative design results in a low on-resistance and ultra-low gate charge, making it suitable for applications demanding superior power density and high efficiency.
Key electrical characteristics include a drain-source breakdown voltage of 900V and a continuous drain current of 20A at 25°C. The static drain-source on-resistance is a maximum of 0.25 Ohms at 10A and 10V gate-source voltage. The device features a gate-source voltage range of ±30V and a gate threshold voltage typically between 3V and 5V.
With a total power dissipation of 250W at 25°C, the STP20N90K5 is designed for robust performance. It operates within a junction temperature range of -55°C to 150°C. The MOSFET is housed in a TO-220 package, suitable for through-hole mounting.
This MOSFET is 100% avalanche tested and Zener-protected, offering enhanced reliability for demanding switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 900 V.
The maximum continuous drain current at 25°C is 20 A.
The typical static drain-source on-resistance is 0.21 Ohms at 10A and 10V.
The operating junction temperature range is -55°C to 150°C.
The STP20N90K5 is available in a TO-220-3 package.