| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP20N65M5 is a high-performance N-channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications and features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 18A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 9A and 10V, and a gate charge (Qg) of 45nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-source voltage is ±25V. It is suitable for through-hole mounting and comes in a TO-220-3 package.
The STP20N65M5 is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The continuous drain current (Id) is 18A (Tc).
The maximum Rds On is 190mOhm at 9A and 10V.
It is designed for through hole mounting.
The operating temperature range is -55°C to 150°C (TJ).
The package is TO-220-3.