| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP200N3LL is an N-Channel MOSFET from STMicroelectronics, designed for power applications. It features a drain-source breakdown voltage of 30V and a continuous drain current capability of 120A at a case temperature.
Key electrical characteristics include a maximum drain-source on-resistance of 2.4mOhm at 60A and 10V, and a gate charge of 53nC at 4.5V. The gate-source threshold voltage is a maximum of 2.5V at 250µA. The device supports a gate-source voltage of up to ±20V.
This MOSFET is housed in a TO-220 package, suitable for through-hole mounting. It has a maximum power dissipation of 176.5W at the case temperature and operates within a temperature range of -55°C to 175°C.
The STP200N3LL utilizes Metal Oxide Semiconductor (MOS) technology and is classified as an enhancement mode FET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
TO-220-3 through-hole mounting
-55°C to 175°C junction temperature
120 A at case temperature
2.4 mOhm measured at 60A and 10V gate-source voltage
53 nC at 4.5V gate-source voltage