| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,450 pcs
|
5450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP19NM50N is an N-channel Power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and a continuous drain current of 14A. The device can dissipate up to 110W of power, making it suitable for moderate power levels. The gate charge is 34nC at 10V, indicating moderate switching speed. The maximum gate-source voltage is ±25V, and the threshold voltage is 4V at 250µA drain current. The MOSFET is housed in a TO-220AB through-hole package, which provides good thermal performance and is easy to mount on heatsinks. Typical applications include power supplies, inverters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
14A at Tc.
110W at Tc.
34nC at Vgs=10V.
±25V.
4V at Id=250µA.