| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,750 pcs
|
44750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP18NM80 is an N-Channel MOSFET designed for power applications. It features a high Drain-Source Voltage (Vdss) of 800V and can handle a continuous current of 17A at the case temperature.
Key electrical characteristics include a maximum On-Resistance (Rds On) of 295mOhm at 8.5A and 10V gate drive. The device has a maximum Gate Charge (Qg) of 70nC and an Input Capacitance (Ciss) of 2070pF. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage of ±30V.
This MOSFET operates at temperatures up to 150°C (TJ). It is housed in a TO-220-3 package and utilizes Through Hole mounting.
The STP18NM80 is built using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V
17A
190W
295 mOhm
5V
150°C
TO-220-3 (through-hole)