| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,050 pcs
|
3050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 1015 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP18NM60N is an N-Channel power MOSFET from STMicroelectronics, rated for 600V drain-source voltage and 13A continuous drain current. It features a maximum on-resistance of 285mOhm at 10V gate drive, enabling efficient power handling. The device has a gate charge of 35nC and input capacitance of 1000pF, supporting fast switching in power supply and motor control applications. It is housed in a TO-220-3 through-hole package and operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 110W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
13A at case temperature.
285mOhm maximum at 10V gate drive and 6.5A.
35nC at 10V.
-55°C to 150°C (junction).
TO-220-3 through-hole.
110W at case temperature.