| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP18N65M2 is an N-channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage of 650V and a continuous drain current of 12A at Tc. The device can dissipate up to 110W at Tc.
Key electrical characteristics include a maximum on-resistance of 330mOhm at 6A drain current and 10V gate drive. The gate charge is 20nC at 10V, and the input capacitance is 770pF at 100V drain-source voltage. These parameters make it suitable for efficient switching applications.
The MOSFET is housed in a TO220 package, which provides good thermal performance and is suitable for through-hole mounting on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current is 12A at case temperature Tc.
The maximum power dissipation is 110W at case temperature Tc.
The maximum on-resistance is 330mOhm at a drain current of 6A and gate-source voltage of 10V.
The maximum gate charge is 20nC at a gate-source voltage of 10V.
The maximum input capacitance is 770pF at a drain-source voltage of 100V.