| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP18N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It offers a 600V drain-source voltage (Vds) and a continuous drain current (Id) of 12A at 25°C.
This MOSFET boasts a low on-resistance of 295mOhm maximum at 6A, 10V, and a low gate charge (Qg) of 20 nC maximum at 10V. It also features a maximum power dissipation of 90W at 25°C and an operating temperature range of 150°C.
Designed for demanding high efficiency converters, the STP18N60DM2 is suitable for bridge topologies and ZVS phase-shift converters. It is housed in a standard TO-220 package and is mounted via a through-hole method.
Key electrical characteristics include a gate-source voltage (Vgs) of ±25V and an input capacitance (Ciss) of 800 pF maximum at 100V. The device operates reliably within a temperature range of -55 to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
12 A at 25°C case temperature.
295 mΩ maximum at 6A drain current and 10V gate-source voltage.
TO-220-3 through-hole package.
150°C.
5V maximum at 250µA drain current.
90W at 25°C case temperature.