| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) |
The STP180N4F6 is a STripFET F6 Power MOSFET manufactured by STMicroelectronics. This N-channel MOSFET operates with a drain-source voltage of 40V and can handle a continuous drain current of 120A at the case temperature.
Key electrical characteristics include a maximum power dissipation of 190W (Tc) and a gate-source voltage range of ±20V. The drive voltage for achieving maximum Rds On is specified between 4.5V and 10V. The MOSFET is built on Silicon (Si) technology.
Packaged in a standard TO-220 package, the STP180N4F6 is designed for through-hole mounting. The typical on-resistance is stated as 3.8 mOhm. The factory pack quantity is 1000 units.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40 V.
The continuous drain current is 120 A at the case temperature.
The maximum power dissipation is 190 W at the case temperature.
The STP180N4F6 is supplied in a TO-220-3 package.
The STP180N4F6 MOSFET is designed for through-hole mounting.
The STP180N4F6 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.