| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP17N80K5 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. Designed for power switching applications, it features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Tc) of 14A. The MOSFET exhibits a low on-state resistance (Rds On) of 340mOhm at 7A and 10V, ensuring efficient power transfer.
With a maximum power dissipation of 170W (Tc), the STP17N80K5 is suitable for demanding applications. It operates within a temperature range of -55°C to 150°C (TJ). The device utilizes Metal Oxide Semiconductor (MOSFET) technology and comes in a standard TO-220-3 package, designed for through-hole mounting.
Key electrical characteristics include a gate charge (Qg) of 26 nC at 10V and an input capacitance (Ciss) of 866 pF at 100V. The gate-source threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±30V. This MOSFET is RoHS3 compliant, offering a reliable solution for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP17N80K5 is 800 V.
The continuous drain current for the STP17N80K5 is 14A, measured at the case (Tc).
The Rds On is a maximum of 340mOhm when measured at 7A drain current and 10V gate-source voltage.
The operating temperature range for the STP17N80K5 is -55°C to 150°C (TJ).
The STP17N80K5 uses MOSFET (Metal Oxide) technology.
The STP17N80K5 is supplied in a TO-220-3 package.