| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
490 pcs
|
490 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP16NS25 is a N-Channel power MOSFET from STMicroelectronics, designed for general-purpose switching applications. It features a drain-source voltage rating of 250V and a continuous drain current of 16A at 25°C case temperature.
The device has a maximum on-resistance of 280mOhm at 8A drain current and 10V gate drive. The gate threshold voltage is 4V maximum at 250µA. It requires a 10V gate drive for optimal low on-resistance performance. The maximum gate charge is 83nC at 10V, and input capacitance is 1270pF at 25V drain-source voltage.
The MOSFET is housed in a through-hole TO-220-3 package, suitable for mounting on a heatsink. Maximum power dissipation is 140W at case temperature, and the junction temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 250V.
The STP16NS25 is in a TO-220-3 through-hole package.
The junction temperature range is -65°C to 150°C.
The recommended gate drive voltage is 10V for achieving minimum on-resistance.
The maximum on-resistance is 280mOhm at 8A drain current and 10V gate drive.
The maximum gate charge is 83nC at 10V gate-source voltage.
The maximum input capacitance is 1270pF at 25V drain-source voltage.