| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STP165N10F4 from STMicroelectronics, is designed for power applications requiring a 100V drain-to-source voltage (Vdss) and a continuous drain current of 120A. It features a low on-resistance of 5.5mOhm at 60A and 10V gate-source voltage, with a maximum gate charge of 180nC.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 315W. The MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting.
Key electrical characteristics include a gate threshold voltage of 4V at 250µA and a maximum gate-source voltage of ±20V. The input capacitance (Ciss) is rated at 10500pF at 25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100 V.
The continuous drain current is 120A.
The operating temperature range is -55°C to 150°C.
The STP165N10F4 is supplied in a TO-220-3 package.
The STP165N10F4 MOSFET is mounted using the through-hole method.