STP160N75F3 The STP160N75F3 is an N-Channel MOSFET from STMicroelectronics designed for high-power applications. It offers a 75V drain-source voltage and a continuous drain current of 120A.
Mfr Part #:

STP160N75F3

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP160N75F3 is an N-Channel MOSFET from STMicroelectronics designed for high-power applications. It offers a 75V drain-source voltage and a continuous drain current of 120A.
✓ Total Stock: 1,470 pcs
$ Price Range: $2.56

STP160N75F3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,357 pcs
1357 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
113 pcs
113 pcs On Request 1 On Request On Request 12+ On Request On Request

STP160N75F3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP160N75F3 Description

Short technical summary and product information.

The STP160N75F3 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It is designed for demanding power electronic applications requiring robust voltage and current handling capabilities.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at 25°C. The on-resistance (Rds On) is rated at a maximum of 4mOhm at 60A and 10V gate-source voltage, ensuring efficient power transfer. The device operates with a gate drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±20V. The gate threshold voltage (Vgs(th)) is 4V at 250µA.

 

With a maximum power dissipation of 330W (Tc), the STP160N75F3 is suitable for applications generating significant heat. It operates within a wide temperature range of -55°C to 175°C (TJ).

 

Packaged in a standard TO-220-3 configuration, this MOSFET is designed for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

STP160N75F3 Quick Information

Product Type: MOSFET
Canonical Name: STP160N75F3 N-Channel MOSFET
Subcategory: MOSFET

STP160N75F3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP160N75F3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP160N75F3 Features

  • N-Channel MOSFET technology
  • 75V drain-source voltage rating
  • 120A continuous drain current
  • Low 4mOhm maximum on-resistance
  • TO-220 package for through-hole mounting

STP160N75F3 Applications

  • Suitable for high-power switching
  • Used in power supply designs
  • Ideal for motor control circuits
  • Applicable in inverter systems

STP160N75F3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STP160N75F3?

75V.

What is the package type of the STP160N75F3?

TO-220-3.

What is the operating temperature range of the STP160N75F3?

-55°C to 175°C.

What is the continuous drain current rating?

120A at 25°C.

What is the on-resistance (Rds(on))?

4mOhm maximum at Vgs=10V and Id=60A.

What is the gate charge of the STP160N75F3?

85nC at Vgs=10V.

What is the input capacitance?

6750pF at Vds=25V.

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