| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | 732 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP15NM60N is an N-Channel MOSFET from STMicroelectronics, featuring a maximum drain-source voltage rating of 600V and continuous drain current of 14A at case temperature. It offers a typical gate charge of 37nC at 10V gate drive, enabling efficient switching in high-voltage applications. The input capacitance is 1250pF at 50V drain-source bias. The device has a maximum gate threshold voltage of 4V at 250µA drain current and supports a maximum gate-source voltage of ±25V. This MOSFET uses metal oxide technology and is supplied in a TO220AB through-hole package suitable for power dissipation. Designers can use it in switch-mode power supplies, motor control circuits, and other high-voltage switching topologies where low gate charge and robust voltage capability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
14A at case temperature Tc.
37nC at Vgs=10V.
1250pF at Vds=50V.
4V maximum at Id=250µA.
±25V.
N-Channel.