| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP15NK50Z is a single N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 500V and a continuous current capability of 14A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance of 340mOhm at 7A and 10V, a gate charge of 106nC at 10V, and an input capacitance of 2260pF at 25V. The gate threshold voltage is a maximum of 4.5V at 100µA, and the maximum gate-source voltage is ±30V.
This MOSFET operates within a temperature range of -50°C to 150°C (TJ) and has a maximum power dissipation of 160W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The component is housed in a TO-220-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The maximum continuous drain current (Id) is 14A at case temperature Tc.
The maximum on-resistance (Rds(on)) is 340mOhm at Vgs=10V and Id=7A.
The device is offered in a TO-220-3 package with through-hole mounting.
The junction temperature range is -50°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at Id=100µA.
The maximum input capacitance (Ciss) is 2260pF at Vds=25V.