| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,470 pcs
|
2470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 1443+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP15N80K5 is an N-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage rating of 800V and can handle a continuous drain current of 14A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 375mOhm at 7A and 10V gate-source voltage. The gate charge (Qg) is 32nC maximum at 10V, and input capacitance (Ciss) is 1100pF at 100V. The gate threshold voltage (Vgs(th)) is 5V maximum at 100µA, with a maximum gate-to-source voltage of ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 190W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STP15N80K5 is supplied in a TO-220-3 package and features a through-hole mounting type, making it suitable for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
14A at case temperature Tc.
375mOhm at 7A drain current and 10V gate voltage.
190W at case temperature Tc.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
32nC maximum at 10V gate voltage.