| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP15N65M5 is a power MOSFET manufactured by STMicroelectronics. This N-Channel device features a drain-source breakdown voltage of 650V and a continuous drain current rating of 11A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance of 340mOhm at 5.5A and 10V, a maximum gate charge of 22nC at 10V, and an input capacitance of 810pF at 100V. The gate-source voltage has a maximum rating of ±25V, with a threshold voltage of 5V at 250µA. The device is designed for a drive voltage of 10V.
With a maximum power dissipation of 125W at Tc and an operating junction temperature of 150°C, the STP15N65M5 is suitable for various power switching applications. It is housed in a TO-220-3 package and utilizes MOSFET (Metal Oxide) technology.
The component is mounted via a through-hole method. It is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
11A at case temperature.
340mOhm maximum at 5.5A and 10V.
22nC maximum at 10V.
810pF maximum at 100V.
Up to 150°C.
TO-220-3 (through-hole).