| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Energy | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STP15N60M2-EP is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology by STMicroelectronics. It features a 600V drain-source voltage (Vds) and a maximum continuous drain current of 11A at 25°C.
This MOSFET exhibits a maximum on-resistance (Rds(on)) of 378mOhm at 5.5A and 10V gate-source voltage. It has a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and a gate-source voltage range of ±25V.
Designed for demanding very high frequency converters (f > 150 kHz), the STP15N60M2-EP is suitable for switching applications. Its TO-220 package allows for through-hole mounting and facilitates heat sinking. The device operates within a temperature range of -55°C to 150°C (TJ).
Key electrical characteristics include an input capacitance (Ciss) of 590 pF at 100V and a total gate charge (Qg) of 17 nC at 10V. The datasheet specifies a single pulse avalanche energy (EAS) of 125 mJ, while the manufacturer page lists 300 mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
It is available in a TO-220-3 package with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The gate threshold voltage ranges from 2 V to 4 V, with a maximum of 4 V at 250 µA.
The typical on-resistance is 0.29 ohm, with a maximum of 0.378 ohm at 10V gate drive and 5.5A drain current.
The continuous drain current is 11 A at Tc=25°C and 7 A at Tc=100°C.
The total gate charge is 17 nC at 10 V gate drive.