STP15810 The STP15810 is an N-channel Power MOSFET from STMicroelectronics, featuring a 100V drain-source voltage and 110A continuous drain current. It utilizes STripFET™ F7 technology for efficient switching.
Mfr Part #:

STP15810

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP15810 is an N-channel Power MOSFET from STMicroelectronics, featuring a 100V drain-source voltage and 110A continuous drain current. It utilizes STripFET™ F7 technology for efficient switching.
✓ Total Stock: 50,842 pcs
$ Price Range: $0.10

STP15810 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,002 pcs
40002 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
9,420 pcs
9420 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
1,420 pcs
1420 pcs On Request 1 On Request On Request On Request On Request On Request

STP15810 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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STP15810 Description

Short technical summary and product information.

The STP15810 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for switching applications. It operates with a drain-source voltage of 100V and can handle a continuous drain current of 110A at 25°C.

 

This MOSFET employs STripFET™ F7 technology with an enhanced trench gate structure, resulting in very low on-state resistance. The typical RDS(on) is 0.0036 Ω at 55A, with a maximum of 0.0042 Ω. Its ultra-low on-resistance and reduced internal capacitance contribute to faster and more efficient switching performance.

 

The device is packaged in a TO-220 package and is supplied in tubes. Key electrical ratings include a gate-source voltage of ±20V, a pulsed drain current of 440A, and a total power dissipation of 250W at 25°C. The operating junction temperature ranges from -55°C to 175°C.

 

Features such as 100% avalanche testing and ultra-low on-resistance make the STP15810 suitable for various power management designs requiring high efficiency and reliability.

STP15810 Quick Information

Product Type: N-channel Power MOSFET
Series: STripFET™ F7
Canonical Name: STP15810 N-channel Power MOSFET
Subcategory: N-channel Power MOSFET

STP15810 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP15810 Estimated Pricing

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1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP15810 Features

  • N-channel Power MOSFET technology
  • 100V drain-source voltage rating
  • 110A continuous drain current
  • Ultra low on-resistance
  • TO-220 package for power applications

STP15810 Applications

  • Suitable for switching applications
  • Designed for power management circuits
  • High efficiency power conversion
  • Automotive power systems
  • Industrial power supplies

STP15810 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the STP15810?

The drain-source voltage (VDS) of the STP15810 is 100V.

What is the maximum continuous drain current for the STP15810?

The maximum continuous drain current (ID) for the STP15810 is 110A at 25°C.

What is the typical on-resistance of the STP15810?

The typical static drain-source on-resistance (RDS(on)) of the STP15810 is 0.0036 Ω at a gate-source voltage of 10V and a drain current of 55A.

What package type is the STP15810 supplied in?

The STP15810 is supplied in a TO-220 package.

What is the operating junction temperature range for the STP15810?

The operating junction temperature range for the STP15810 is -55°C to 175°C.

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