| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP14NM50N is a power MOSFET manufactured by STMicroelectronics, designed for various electronic applications requiring high voltage and current handling capabilities. This N-channel MOSFET features a drain-source breakdown voltage of 500V and a continuous drain current of 12A at a case temperature (Tc).
Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 320mOhm at 6A and 10V, a gate charge (Qg) of 27nC at 10V, and a gate-source threshold voltage (Vgs(th)) of 4V at 100µA. The device supports a gate-source voltage (Vgs) of up to ±25V and has an input capacitance (Ciss) of 816pF at 50V.
With a maximum power dissipation of 90W (Tc), the STP14NM50N is suitable for applications requiring robust thermal performance. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET utilizes Metal Oxide Semiconductor technology and belongs to the MDmesh tradename series.
Packaged in a TO-220-3 configuration, the STP14NM50N is designed for through-hole mounting, making it convenient for integration into circuit boards. The device is supplied in tube packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP14NM50N is available in a TO-220-3 package.
The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current (Id) is 12A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 320 mOhm at 6A, Vgs=10V.
The maximum gate charge (Qg) is 27 nC at Vgs=10V.