| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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964 pcs
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964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP14NF12FP is an N-Channel Power MOSFET manufactured by STMicroelectronics, utilizing the STripFET™ II process. This series is designed to minimize input capacitance and gate charge, making it suitable for high-efficiency isolated DC-DC converters in telecom and computer applications, as well as other applications requiring low gate charge drive.
Key electrical specifications include a drain-source breakdown voltage of 120V and a continuous drain current of 8.5A at 25°C. The on-resistance (Rds On) is a maximum of 180mOhm at 7A and 10V gate-source voltage. It also features a gate charge (Qg) of 21nC at 10V and an input capacitance (Ciss) of 460pF at 25V.
This MOSFET is rated for a maximum continuous drain current of 9A at 100°C and has a pulsed drain current capability of 56A. The total power dissipation is 25W at 25°C case temperature. It operates within a junction temperature range of -55°C to 175°C.
The STP14NF12FP comes in a TO-220FP package and is designed for through-hole mounting. Its exceptional dv/dt capability and application-oriented characterization make it a robust choice for switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 175°C junction temperature.
14A at case temperature 25°C per datasheet, and 8.5A per existing database.
180mΩ maximum at 7A and 10V gate drive.
4V maximum at 250µA drain current.
21nC at 10V gate voltage.