| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,550 pcs
|
2550 pcs | On Request | 1 | On Request | On Request | 815 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP13NM50N is an N-channel power MOSFET from STMicroelectronics designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 12A. The device offers a maximum on-resistance of 320mOhm at a gate-source voltage of 10V and a drain current of 6A, ensuring efficient power conversion and minimal conduction losses.
Key electrical characteristics include a maximum gate threshold voltage of 4V at a drain current of 250µA and a total gate charge of 30nC at Vgs=10V, which facilitates fast switching. The gate-source voltage range is ±25V, providing flexibility in drive circuits. The MOSFET is housed in the industry-standard TO220AB package, suitable for through-hole mounting on PCBs.
This device is suitable for a variety of power electronics applications including switch-mode power supplies, DC-DC converters, and motor control circuits. Its robust design ensures reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V
±25 V
4 V maximum at Id = 250 µA
30 nC at Vgs = 10 V
320 mOhm maximum at Id = 6 A, Vgs = 10 V