| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
883 pcs
|
883 pcs | On Request | 1 | On Request | On Request | 1551+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP13N80K5 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers a robust 800V drain-to-source voltage (Vdss) and a continuous drain current of 12A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 450mOhm at 6A and 10V, an input capacitance of 870pF, and a gate charge of 29nC. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting. Its construction utilizes MOSFET (Metal Oxide) technology, providing efficient switching capabilities for various power management designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 800 V.
The continuous drain current is 12A.
The package type is TO-220-3.
The operating temperature range is -55°C to 150°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.