| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP13N65M2 is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 650V and a continuous drain current of 10A at 25°C.
Key electrical characteristics include a maximum on-resistance of 430mOhm at 5A and 10V gate drive voltage, and a gate threshold voltage of 4V at 250µA. The MOSFET has a maximum gate charge of 17 nC at 10V and a maximum gate-source voltage of ±25V. Input capacitance (Ciss) is rated at 590 pF at 100V.
With a maximum power dissipation of 110W (Tc) and an operating temperature of up to 150°C, this MOSFET is suitable for demanding thermal environments. It is constructed using MOSFET (Metal Oxide) technology and belongs to the MDmesh™ M2 series.
The component is available in a Through Hole mounting type and comes in a TO-220-3 package, also referred to as TO-220.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V.
The continuous drain current is 10A at 25°C case temperature.
The maximum on-resistance is 430mΩ at 5A drain current and 10V gate voltage.
The maximum junction temperature is 150°C.
The STP13N65M2 is available in a TO-220-3 through-hole package.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 17 nC at 10V gate voltage.