| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23,500 pcs
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23500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP13N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for power switching applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 11A (Tc).
Key electrical characteristics include a maximum on-resistance of 380mOhm at 5.5A and 10V gate-source voltage, and a gate threshold voltage of 4V at 250µA. The input capacitance (Ciss) is rated at 580pF at 100V, and the gate charge (Qg) is 17nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STP13N60M2 is available in a TO-220-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
It comes in a TO-220-3 package with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum continuous drain current is 11A at case temperature (Tc).
The maximum on-resistance is 380mΩ at a drain current of 5.5A and gate voltage of 10V.
The maximum gate charge is 17nC at a gate voltage of 10V.