| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The STP130N8F7 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. Designed for robust applications, it offers a maximum drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 80A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor technology and is suitable for various power management tasks. Key electrical specifications include a drive voltage range of 4.5V to 10V for optimal Rds On performance and a maximum gate-source voltage (Vgs) of ±20V. The device has a maximum power dissipation of 205W (Tc).
Packaged in a standard TO-220-3 configuration, the STP130N8F7 is designed for through-hole mounting, making it convenient for integration into circuit boards. Its environmental compliance includes RoHS3 compliance and an MSL rating of 1, indicating unlimited shelf life under standard conditions.
This component is ideal for applications requiring efficient power switching and high current handling capabilities within a standard TO-220 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80V.
The continuous drain current (Id) at 25°C is 80A.
The STP130N8F7 is an N-Channel MOSFET.
The package type is TO-220.
The STP130N8F7 is mounted through hole.