| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP130N6F7 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET™ F7 technology with an enhanced trench gate structure. This design results in very low on-state resistance and reduced internal capacitance for efficient switching.
Key electrical specifications include a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 80A at Tcase = 25°C. The static drain-source on-resistance (RDS(on)) is a maximum of 5mΩ at 40A and 10V gate-source voltage. The gate threshold voltage (VGS(th)) is a maximum of 4V at 250µA.
This MOSFET is designed for switching applications. It has a maximum power dissipation (PTOT) of 160W at Tcase = 25°C and an operating temperature range of -55°C to 175°C (TJ). The component is supplied in a TO-220 package and is suitable for through-hole mounting.
Additional electrical characteristics include an input capacitance (Ciss) of 2600 pF at 25V and a gate charge (Qg) of 42 nC at 10V. The maximum gate-source voltage (VGS) is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-220-3 through-hole package.
-55°C to 175°C (junction temperature).
80A at 25°C case temperature.
5mΩ at 40A, 10V gate drive.
Maximum 4V at 250µA drain current.