| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | 1124+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP130N10F3 is an N-channel enhancement mode Power MOSFET utilizing STMicroelectronics' STripFET III technology. This technology is designed to minimize on-resistance and gate charge, providing superior switching performance.
Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous current rating of 120A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 9.6mOhm at 60A and 10V gate-source voltage. The device operates within a temperature range of -55°C to 175°C.
This MOSFET is suitable for high current switching applications. It is supplied in a TO-220 package with through-hole mounting.
The device has a gate-source voltage (Vgs) maximum of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. Input capacitance (Ciss) is 3305 pF at 25V, and gate charge (Qg) is a maximum of 57 nC at 10V. The maximum power dissipation is 250W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
120A at case temperature 25°C.
9.6mOhm maximum at 60A and 10V gate drive.
TO-220-3.
-55°C to 175°C (junction).
57nC at 10V gate voltage.
3305pF at 25V drain-source voltage.