BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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332,325 pcs
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332325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Stanson Technology STP1305 is a Trench MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (VDSS) of 100V and a maximum gate-source voltage (VGS) of 20V. The device has a maximum drain current (IDS) of 2.5A and a maximum power dissipation (PD) of 1.25W.
This MOSFET is housed in a compact SOT-23 package, making it suitable for space-constrained designs. It also features a maximum drain-source on-resistance (RDS(Max)) of 3mΩ at 25°C. The STP1305 is supplied in a standard package quantity of 3000 units on tape and reel.
Key electrical characteristics include a gate threshold voltage (VTH) of 1V at 25°C. The STP1305 is part of Stanson Technology's range of Trench MOSFETs, which are known for their efficiency and performance in power management applications.
| Qty | Low | High |
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| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the STP1305 is 100V.
The maximum drain current (IDS) of the STP1305 is 2.5A.
The STP1305 is available in a SOT-23 package.
The maximum power dissipation (PD) for the STP1305 is 1.25W.
The gate threshold voltage (VTH) of the STP1305 is 1V at 25°C.