| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
67 pcs
|
67 pcs | On Request | 1 | On Request | On Request | 948 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP12PF06 is a P-Channel enhancement-mode MOSFET manufactured by STMicroelectronics. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 12A at 25°C case temperature. The device can dissipate up to 60W and is designed for switching and power management applications.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 200mOhm at Vgs=10V and Id=10A, a gate threshold voltage of 4V at Id=250µA, and a gate charge of 21nC at Vgs=10V. The input capacitance is 850pF typical at Vds=25V. The device is rated for single pulse avalanche energy of 200mJ and has a dv/dt capability of 6V/ns, indicating ruggedness for inductive loads.
The STP12PF06 is housed in a TO-220AB through-hole package, suitable for PCB mounting with a heatsink for high-power applications. The operating junction temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
-55°C to 175°C (junction).
4V maximum at Id=250µA.
200mOhm maximum at Vgs=10V, Id=10A.
850pF typical at Vds=25V, f=1MHz.
21nC maximum at Vgs=10V.
200mJ single pulse.