STP12NM60N The STP12NM60N is an N-Channel Power MOSFET from STMicroelectronics designed for high efficiency converters. It features a 600V drain-source voltage and 10A continuous current capability.
Mfr Part #:

STP12NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP12NM60N is an N-Channel Power MOSFET from STMicroelectronics designed for high efficiency converters. It features a 600V drain-source voltage and 10A continuous current capability.
✓ Total Stock: 7,015 pcs
$ Price Range: $2.56

STP12NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,565 pcs
6565 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request 748 On Request 2026-06-03 07:15:09

STP12NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STP12NM60N Description

Short technical summary and product information.

The STMicroelectronics STP12NM60N is a second-generation MDmesh™ Power MOSFET designed for demanding high-efficiency converter applications. This N-channel MOSFET offers a 600V drain-source voltage and a continuous drain current of 10A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 410mOhm at 5A and 10V, an input capacitance (Ciss) of 960pF at 50V, and a gate charge (Qg) of 30.5nC at 10V. The device operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 90W at 25°C.

 

Packaged in a standard TO-220 configuration, the STP12NM60N is suitable for through-hole mounting. Its features, including low input capacitance and gate charge, make it an efficient choice for switching applications requiring high performance and reliability.

STP12NM60N Quick Information

Product Type: MOSFET
Series: Second generation MDmesh™
Canonical Name: STP12NM60N N-Channel Power MOSFET
Subcategory: Power MOSFET

STP12NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP12NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP12NM60N Features

  • 600V drain-source voltage rating.
  • 10A continuous drain current.
  • Low 410mOhm Rds(on).
  • TO-220 package for through-hole mounting.
  • Suitable for switching applications.

STP12NM60N Applications

  • High-voltage power supply circuits.
  • Motor control and drive systems.
  • DC-DC converter switching stages.
  • Inverter and UPS power stages.

STP12NM60N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STP12NM60N?

The maximum drain-source voltage (Vdss) for the STP12NM60N is 600V.

What is the continuous drain current of the STP12NM60N?

The continuous drain current (Id) for the STP12NM60N is 10A at 25°C.

What is the Rds(on) for the STP12NM60N?

The Rds(on) for the STP12NM60N is a maximum of 410mOhm at 5A and 10V.

What is the operating temperature range for the STP12NM60N?

The operating junction temperature range for the STP12NM60N is -55°C to 150°C.

What package type is the STP12NM60N available in?

The STP12NM60N is available in a TO-220-3 package.

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