| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,251 pcs
|
37251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20,620 pcs
|
20620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP12NM50 is a single N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for through-hole mounting and comes in a TO-220-3 package.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 12A at the case temperature. The gate charge (Qg) is specified at 39 nC maximum at 10V gate-source voltage, and the input capacitance (Ciss) is 1000 pF maximum at 25V drain-source voltage. The on-resistance (Rds On) is a maximum of 350 mOhm at 6A drain current and 10V gate-source voltage.
With a maximum power dissipation of 160W at the case temperature and an operating temperature range of -65°C to 150°C (TJ), this MOSFET is suitable for various power management applications. The gate threshold voltage (Vgs(th)) is 5V maximum at 50µA, and the maximum gate-to-source voltage is ±30V.
This MOSFET utilizes Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology. Its through-hole mounting type makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 500V.
The STP12NM50 is available in a TO-220-3 package.
The operating junction temperature range is -65°C to 150°C.
The maximum gate charge is 39 nC at 10V gate-source voltage.
The maximum on-resistance is 350 mOhm at 6A drain current and 10V gate drive.
The maximum continuous drain current is 12A at case temperature.
The maximum power dissipation is 160W at case temperature.