| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP12NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for high voltage applications, featuring a maximum drain-to-source voltage (Vds) of 800V and a continuous drain current (Id) of 10.5A at case temperature.
With a maximum power dissipation of 190W (Tc), this MOSFET is suitable for power switching applications. It has a low on-resistance (Rds On) of 750mOhm at 5.25A and 10V gate drive voltage. The gate charge (Qg) is 87nC at 10V, and input capacitance (Ciss) is 2620pF at 25V.
The operating temperature range is from -55°C to 150°C (TJ). The STP12NK80Z is packaged in a TO-220-3 configuration and is designed for through-hole mounting.
This MOSFET utilizes Metal Oxide technology and is specified with a gate threshold voltage (Vgs(th)) of 4.5V at 100µA and a maximum gate-source voltage (Vgs) of ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
TO-220-3 (through-hole).
-55°C to 150°C (junction).
Maximum 4.5V at 100µA drain current.
87nC at 10V gate-source voltage.
2620pF at 25V drain-source voltage.
±30V.