| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,850 pcs
|
3850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP12N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power applications and features a high drain-source voltage rating of 600V.
Key electrical specifications include a continuous drain current of 9A (at case temperature) and a maximum power dissipation of 85W (at case temperature). The MOSFET has an on-resistance of 450mOhm at 4.5A and 10V gate-source voltage. Its input capacitance is 538pF at 100V, and gate charge is 16nC at 10V.
Operating temperature ranges from -55°C to 150°C (TJ). The device is housed in a TO-220 package and utilizes through-hole mounting.
This MOSFET is suitable for various power switching and control applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The maximum continuous drain current is 9A at case temperature.
The maximum on-resistance (Rds(on)) is 450mOhm at 4.5A and 10V Vgs.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.
The device is offered in a TO-220-3 through-hole package.
The maximum total gate charge (Qg) is 16nC at 10V Vgs.